Method for monitoring defects of semiconductor device

Details Method for monitoring defects of semiconductor device Method for monitoring defects of semiconductor device

1998-05-26

2000-03-14

Rosenberger, Richard A.

Optics: measuring and testing

Inspection of flaws or impurities

Surface condition

3562436, G01B 1100

Patent

active

060380195

ABSTRACT:
A method for precisely monitoring defects on a semiconductor device includes inserting, into a predetermined region of a photomask used for manufacturing a semiconductor device on a semiconductor wafer, a reference defect pattern with a predetermined distribution of defects with varying sizes. Then the method involves forming reference defects on the semiconductor wafer using the photomask having the reference defect pattern. Next, control settings of a defect detection device are selected such that an output distribution of defects most closely matches the predetermined distribution of defects. Finally, defects in an integrated circuit chip region of the semiconductor wafer are monitored with the defect detection device, using the control settings selected during the selecting step.

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patent: 4641963 (1987-02-01), Levine
patent: 4831274 (1989-05-01), Kohno et al.
patent: 4871257 (1989-10-01), Suzuki et al.
patent: 4898471 (1990-02-01), Stonestrom et al.
patent: 5798193 (1998-08-01), Pierrat et al.

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