Method for modulating stresses of a contact etch stop layer

Details Method for modulating stresses of a contact etch stop layer Method for modulating stresses of a contact etch stop layer

2006-09-19

2009-12-08

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C257SE21241

Reexamination Certificate

active

07629273

ABSTRACT:
A method for forming a semiconductor structure includes providing a substrate comprising a first device region, forming a metal-oxide-semiconductor (MOS) device in the first device region, forming a stressed layer over the MOS device, and performing a post-treatment to modulate a stress of the stressed layer. The post-treatment is selected from the group consisting essentially of ultra-violet (UV) curing, laser curing, e-Beam curing, and combinations thereof.

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