Method for modifying resist images by electron beam exposure

Details Method for modifying resist images by electron beam exposure Method for modifying resist images by electron beam exposure

2005-05-31

2005-05-31

Duda, Kathleen (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

C430S322000, C430S328000, C430S330000, C430S296000

Reexamination Certificate

active

06900001

ABSTRACT:
It has now been surprisingly found that by exposing a photoresist to flood electron beam exposure in combination with optical exposure, that the pullback on the upper region of lithographic images in resist can be virtually eliminated during electron beam processing. This unexpected result is due to the fact that the electron beam exposure and optional bake are carried out prior to development of the resist. This means that the resist shrinkage that is seen as a result of these steps is constrained laterally by the resist film itself. Thus, the resist is free to shrink vertically, and the resulting shrinkage provides a reduction in the line slimming and an improvement in the etch rate of the resist. This leads to the formation of a better resist image.

REFERENCES:
patent: 5003178 (1991-03-01), Livesay
patent: 5648198 (1997-07-01), Shibata
patent: 6319655 (2001-11-01), Wong et al.
patent: 6589709 (2003-07-01), Okoroanyanwu et al.

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