Semiconductor device manufacturing: process – With measuring or testing – Electrical characteristic sensed
Reexamination Certificate
2007-03-27
2007-03-27
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
With measuring or testing
Electrical characteristic sensed
C324S444000
Reexamination Certificate
active
10484001
ABSTRACT:
A measurement-facilitating method of measuring the breakdown voltage of a semiconductor epitaxial wafer, and a semiconductor epitaxial wafer whose breakdown voltage is superior are realized. In a method of measuring the breakdown voltage of a semiconductor epitaxial wafer having to do with the present invention, the breakdown voltage between contacts14and18is measured only through the Schottky contacts, without need for ohmic contacts. Inasmuch as the manufacturing process of forming ohmic contacts is accordingly omitted, the semiconductor epitaxial wafer10may be readily used in a breakdown-voltage measurement test. The measurement of the wafer-10breakdown voltage thus may be readily carried out. Likewise, because the inter-contact breakdown voltage V2of a wafer10can be measured prior to manufacturing a working device from it, unsuitable wafers10can be excluded before they are cycled through the working-device fabrication process. Reduction in losses can accordingly be counted upon, in contrast to conventional measuring methods, by which inter-contact breakdown voltage V2is measured following fabrication of the working devices.
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Ismail et al. An MOS transistor with Schottky source/drain contacts and a self-aligned low-resistance T-gate, Microelectronic Engineering, vol. 35, (1997), p. 361-363.
Akita Katsushi
Kiyama Makoto
Yamashita Masashi
Judge James W.
Lebentritt Michael
Pompey Ron
Sumitomo Electric Industries Ltd.
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