Method for measuring the kink effect of a semiconductor device

Details Method for measuring the kink effect of a semiconductor device Method for measuring the kink effect of a semiconductor device

1998-06-30

2000-04-04

Nguyen, Vinh P.

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

G01R 3126

Patent

active

060466014

ABSTRACT:
A method for measuring the extent of the kink effect of a transistor is disclosed herein. The aforementioned method includes the following steps. The first, generate a simulated drain current versus a gate voltage according to the transistor. Secondary, generate a drain current versus the gate voltage. Finally, integrate a difference between the simulated drain current and the drain current by the gate voltage.

REFERENCES:
patent: 5185280 (1993-02-01), Houston et al.
patent: 5767549 (1998-06-01), Chen et al.
patent: 5904540 (1999-05-01), Sheng et al.

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