Method for measuring etch rates during a release process

Details Method for measuring etch rates during a release process Method for measuring etch rates during a release process

2006-05-30

2006-05-30

Norton, Nadine G. (Department: 1765)

Etching a substrate: processes

Gas phase etching of substrate

C216S059000, C216S073000, C216S074000

Reexamination Certificate

active

07052622

ABSTRACT:
A method of determining the time to release of a movable feature in a multilayer substrate of silicon-containing materials including alternate layers of polysilicon and silicon oxide wherein a mass monitoring device determines the mass of a released feature, and the substrate is etched with anhydrous hydrogen fluoride until the substrate mass is equivalent to that of the released movable feature when the etch time is noted. A suitable mass monitoring device is a quartz crystal microbalance.

REFERENCES:
patent: 5788871 (1998-08-01), Huh
patent: 5963788 (1999-10-01), Barron et al.
patent: 6238580 (2001-05-01), Cole et al.
patent: 6544478 (2003-04-01), Oyama et al.
patent: 6790376 (2004-09-01), Markle et al.
patent: 196 41 070 (1998-04-01), None
patent: 01236633 (1989-09-01), None
PCT Search Report.
Translation of DE 196 41 070.

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