Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Self-aligned
Patent
1996-06-17
1997-08-05
Niebling, John
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Self-aligned
257588, 257592, 438371, H01L 21265
Patent
active
056542119
ABSTRACT:
A method of producing the bipolar transistor includes forming an aperture through a triple layer over an active region of an epitaxial layer, then forming a shallow polysilicon film at the bottom of the aperture. An intrinsic base region is formed by segregating a conductive impurity to the epitaxial layer by thermally oxidizing the polysilicon film. Then an extrinsic base region is formed by diffusing impurities into the epitaxial layer from a polysilicon sidewall formed on the aperture. In the transistor fabricated according to this method, an insulation layer of oxide silicon or nitrogen silicon is formed under the base polysilicon layer. Accordingly, impurities from the base polysilicon layer do not diffuse into the epitaxial layer during the diffusion process. Instead, the extrinsic base region is formed by the diffusion of impurities from the polysilicon sidewall which is connected to the base polysilicon layer. Therefore the length of the entire base region is shortened. Furthermore, by forming the intrinsic base region by thermally oxidizing the shallow polysilicon film, the base width and the transmission time are reduced, thus leading to a higher performance speed of the element.
REFERENCES:
patent: 5024957 (1991-06-01), Harame et al.
patent: 5501992 (1996-03-01), Nakamura
patent: 5541124 (1996-07-01), Miwa et al.
Niebling John
Pham Long
Samsung Electronics Co,. Ltd.
LandOfFree
Method for manufacturing ultra-high speed bipolar transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing ultra-high speed bipolar transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing ultra-high speed bipolar transistor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1074429