Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-09-18
2007-09-18
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S270000, C257SE29282, C257SE21375, C257SE21410, C257SE21629, C257SE21643
Reexamination Certificate
active
11202733
ABSTRACT:
A method of manufacturing a trench MOSFET with high cell density is disclosed. The method introduces a sidewall oxide spacer for narrowing the opening of the trench structure, thereby decreasing the cell pitch of the memory units. Moreover, the source structure is formed automatically by means of an extra contact silicon etch for preventing the photoresist from lifting during the ion implantation of the prior art. On the other hand, the contact structure is filled with W-plug for overcoming the defect of poor metal step coverage resulted from filling the contact structure with AlSiCu according to the prior art. Thus, the cell density of the device can be increased; and the Rds-on and the power loss of the device can be decreased.
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Chang Chien-Ping
Hsieh Hsin Huang
Tseng Mao Song
Yuan Tien-Min
Fourson George
Mosel Vitelic Inc.
Townsend and Townsend / and Crew LLP
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