Method for manufacturing transistor in semiconductor device

Details Method for manufacturing transistor in semiconductor device Method for manufacturing transistor in semiconductor device

2007-10-09

2007-10-09

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S589000, C257SE21618

Reexamination Certificate

active

11154458

ABSTRACT:
Disclosed is a method for manufacturing a transistor in a semiconductor device, which can improve a device's refresh characteristics. The method includes: providing a silicon substrate having active and field regions; performing a channel ion implantation into the substrate; sequentially forming a hard mask film and a photoresist pattern exposing a gate formation region where the channel ion implantation occurred; performing a second, higher concentration channel ion implantation using the photoresist pattern as a mask, forming doped regions in the substrate at the gate formation region and sides; etching a hard mask using the photoresist pattern as a barrier; removing the photoresist pattern; etching the substrate using a portion of the remaining hard mask as a barrier forming a groove; removing the remaining hard mask; forming a gate in the groove where the hard mask was removed; and forming source and drain regions at both sides of the gate.

REFERENCES:
patent: 5994202 (1999-11-01), Gambino et al.
patent: 6191446 (2001-02-01), Gardner et al.
patent: 2001-189456 (2001-07-01), None
patent: 10-1998-056994 (1998-09-01), None
patent: 10-1998-057015 (1998-09-01), None
patent: 1020050004352 (2005-01-01), None
patent: 102006005100 (2006-01-01), None
Korean Patent Gazette, Jun. 8, 2006.

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