Method for manufacturing the shallow trench isolation structure

Details Method for manufacturing the shallow trench isolation structure Method for manufacturing the shallow trench isolation structure

2007-08-06

2010-06-08

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S700000, C438S703000, C438S723000, C438S724000, C438S745000, C438S761000, C438S778000, C438S942000

Reexamination Certificate

active

07732337

ABSTRACT:
A method for manufacturing a shallow trench isolation (STI) structure is provided. In the method, a substrate is initially provided. Then, a patterned pad layer and a patterned mask layer are successively formed in order on the substrate. After that, a portion of the substrate is removed by using the patterned mask layer and the patterned pad layer as a mask to form trenches in the substrate. Next, a first insulation layer is formed in the trenches. Afterwards, a protection layer is conformally formed on the substrate. Then, a second insulation layer is formed on the protection layer above the first insulation layer. Next, the patterned mask layer and the patterned pad layer are removed. Finally, a portion of the protection layer and the second insulation layer are removed.

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patent: 2008/0157264 (2008-07-01), Zhao et al.

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