Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-06-25
2000-12-12
Chaudhuri, Olik
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438532, 438923, H01L 21336
Patent
active
061598097
ABSTRACT:
In a method for manufacturing a surface channel type P-channel MOS transistor, a gate insulating layer is formed on a semiconductor substrate, and a gate electrode is formed on the gate insulating layer. Then, a P-type impurity diffusion preventing operation is performed upon the gate electrode, and P-type impurities are implanted into the gate electrode.
REFERENCES:
patent: 5393676 (1995-02-01), Anjum et al.
patent: 5464792 (1995-11-01), Tseng et al.
Y.H. Lin, C.S. Lai, C.L. Lee, T.F. Lei, T.S. Chao. Nitridization of the Stacked Poly-Si Gate to Suppress the Boron Penetration in pMOS. IEEE Electron Device Letters, Vo. 16 No. 6, Jun. 1995. P. 248-249.
W.T. Sun, S.H. Chen, C.J. Lin, T.S. Chao, C.C.-H Hsu. Process Optimization for Preventing Boron-Penetration Using P or As Co-Implant in P-Poly Gate of P-MOSFETs. 1995 International Symposium on VLSI Technology, Systems, and Applications. Jun. 1995 P. 40-43.
Second Office Action of Japanese Application No. 8-167284 Issued on Oct. 6, 1998.
European Patent Office; Patent Abstracts of Japan; Publication Number: 02078229; Publication Date: Mar. 19, 1990; Title: Field-Effect Transistor and it's Manufacture.
Extended Abstracts of the 1995 International Conference; Title: Impact of Nitrogen Implantation on Highly Reliable Sub-Quarter Micron LDD MOSFETs; Author: Shimizu et al.; Date: Aug. 21, 1995.
European Search Report; Date: Mar. 27, 1998.
Chaudhuri Olik
Montas Ginette Peralta
NEC Corporation
Whitesel J. Warren
LandOfFree
Method for manufacturing surface channel type P-channel MOS tran does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing surface channel type P-channel MOS tran, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing surface channel type P-channel MOS tran will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-216218