Method for manufacturing split gate flash memory

Details Method for manufacturing split gate flash memory Method for manufacturing split gate flash memory

1996-12-05

1998-08-04

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438596, 438657, H01L 218247

Patent

active

057892962

ABSTRACT:
A method for forming a structure of a split gate flash memory is provided. The method includes steps of: a) preparing a substrate having an oxide layer; b) forming a first conducting layer over the oxide layer; c) etching a portion of the first conducting layer to form a word line structure for the flash memory; d) forming a spacer layer over the word line structure to be a side-wall portion of a word-line protecting layer; e) oxidizing the word-line protecting layer to form a dielectric layer; and f) forming a floating gate layer over the dielectric layer.

REFERENCES:
patent: 4443930 (1984-04-01), Hwang et al.
patent: 4744861 (1988-05-01), Matsunaga et al.
patent: 5231041 (1993-07-01), Arima et al.
patent: 5371028 (1994-12-01), Koh

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