Method for manufacturing silicon carbide semiconductor...

Details Method for manufacturing silicon carbide semiconductor... Method for manufacturing silicon carbide semiconductor...

2007-01-16

2010-10-12

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S285000, C438S586000, C438S602000, C438S660000, C438S773000, C438S931000, C257S077000, C257S628000, C257SE21062, C257SE21067

Reexamination Certificate

active

07811874

ABSTRACT:
The object is to provide a method for the fabrication of a semiconductor device having undergone an anneal treatment for the purpose of forming such ohmic contact as enables decrease of ohmic contact resistance and being provided on the (000-1) plane of silicon carbide with an insulating film and provide the semiconductor device. The method for the fabrication of a silicon carbide semiconductor device includes the steps of performing thermal oxidation on the (000-1) plane of a silicon carbide semiconductor in a gas containing at least oxygen and moisture, thereby forming an insulating film in such a manner as to contact the (000-1) plane of the silicon carbide semiconductor, removing part of the insulating film, thereby forming an opening part therein, depositing contact metal on at least part of the opening part, and performing a heat treatment, thereby forming a reaction layer of the contact metal and silicon carbide, wherein the heat treatment is implemented in a mixed gas of an inert gas and hydrogen.

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