Method for manufacturing SiC semiconductor device

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S151000, C438S396000, C438S261000, C438S519000, C257S077000, C257S327000, C257SE21409, C257SE29012

Reexamination Certificate

active

07745276

ABSTRACT:
A method for manufacturing a SiC semiconductor device includes: preparing a SiC substrate having a (11-20)-orientation surface; forming a drift layer on the substrate; forming a base region in the drift layer; forming a first conductivity type region in the base region; forming a channel region on the base region to couple between the drift layer and the first conductivity type region; forming a gate insulating film on the channel region; forming a gate electrode on the gate insulating film; forming a first electrode to electrically connect to the first conductivity type region; and forming a second electrode on a backside of the substrate. The device controls current between the first and second electrodes by controlling the channel region. The forming the base region includes epitaxially forming a lower part of the base region on the drift layer.

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