Method for manufacturing SiC semiconductor device

Details Method for manufacturing SiC semiconductor device Method for manufacturing SiC semiconductor device

2008-05-29

2010-12-14

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C257S077000, C257SE21605

Reexamination Certificate

active

07851382

ABSTRACT:
A method for manufacturing a SiC semiconductor device includes: forming an impurity layer in a SiC layer; and forming an oxide film on the SiC layer. The forming the impurity layer includes: implanting an impurity in the SiC layer; applying a cap layer on the SiC layer; annealing the cap layer to be transformed to a carbon layer; annealing the SiC layer to activate the impurity with covering the SiC layer with the carbon layer; removing the carbon layer; and performing a sacrifice oxidation process. The performing the sacrifice oxidation process includes: forming a sacrifice oxide film; and removing the sacrifice oxide film. The forming the oxide film is performed after the performing the sacrifice oxidation process.

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Kostecki et al., “Surface studies of carbon films from pyrplyzed photoresist,” Thin Solid Films 396 (2001), pp. 36-43.
Shenoy et al., “Effect of substrate orientation and crystal anisotropy on the thermally oxidized SiO2/SiC interface,” J.Appl.Phys. 79, 1996, pp. 3042-3045.
Office Action mailed Dec. 15, 2009 from the Japan Patent Office for corresponding patent application No. 2007-164092 (English translation enclosed).

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