Method for manufacturing SiC semiconductor device

Details Method for manufacturing SiC semiconductor device Method for manufacturing SiC semiconductor device

2007-04-03

2009-08-04

Loke, Steven (Department: 2818)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S931000, C438S522000, C257S077000

Reexamination Certificate

active

07569496

ABSTRACT:
A method for manufacturing a SiC semiconductor device includes: forming an impurity layer in a SiC layer; and forming an oxide film on the SiC layer. The forming the impurity layer includes: implanting an impurity ion in the SiC layer; forming a carbon layer on the SiC layer; heating the SiC layer for activating the implanted impurity in the SiC layer covered with the carbon layer; and removing the carbon layer from the SiC layer. The forming the carbon layer includes: coating a resist on the SiC layer; and heating the resist for evaporating organic matter in the resist so that the resist is carbonized. The forming the oxide film is performed after the removing the carbon layer.

REFERENCES:
patent: 4865732 (1989-09-01), Garrant et al.
patent: 6159884 (2000-12-01), Flemish et al.
patent: 6500731 (2002-12-01), Nakagawa et al.
patent: 7083903 (2006-08-01), Edelberg et al.
patent: 2005/0029646 (2005-02-01), Ueda et al.
patent: 2006/0220027 (2006-10-01), Takahashi et al.
patent: 2007/0089761 (2007-04-01), Banerjee et al.
patent: 2007/0167026 (2007-07-01), Miura
patent: 2000-012482 (2000-01-01), None
patent: 2001-068428 (2001-03-01), None
patent: WO 2005/076327 (2005-01-01), None
patent: A-2005-260267 (2005-09-01), None
patent: A-2005-303010 (2005-10-01), None
patent: A-2005-353771 (2005-12-01), None
Guy, O.J. et al.,Improved Schottky Contacts to Annealed 4H-Sic Using a Protective Carbon Cap: Investigated Using Current Voltage Measurements and Atomic Force Microscopy,Diamond and Related Materials, 15 , 2006, pp. 1472-1477.
Office Action dated Feb. 15, 2008 in corresponding German Patent Application No. 10 2007 016 085.4 (and English translation).

Affiliated with

Also associated with

Rating

Method for manufacturing SiC semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing SiC semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing SiC semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4116054