Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-06-12
2000-09-26
Nguyen, Tuan H.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438622, 438627, 438637, H01L 214763
Patent
active
061242012
ABSTRACT:
An integrated circuit having semiconductor devices is connected by a first conductive channel damascened into a first oxide layer above the devices. A stop nitride layer, a via oxide layer, a via nitride layer, and a via resist are sequentially deposited on the first channel and the first oxide layer. The via resist is photolithographically developed with rectangular cross-section vias greater than the width of the channels and the via nitride layer is etched to the rectangular cross-section. A second channel oxide layer and a second channel resist are sequentially deposited on the via nitride layer and the exposed via oxide layer. The second channel resist is photolithographically developed with the second channels and an anisotropic oxide etch etches the second channels and rectangular box vias down to the stop nitride layer. He stop nitride layer is nitride etched in the rectangular via configuration and conductive material is damascened into the second channels and the via to be chemical-mechanical polished to form the interconnections between two levels of channels.
REFERENCES:
patent: 5328553 (1994-07-01), Poon
patent: 5420077 (1995-05-01), Saito et al.
patent: 5880018 (1999-03-01), Boeck et al.
Chang Mark S.
Cheung Robin
Huang Richard J.
Hui Angela T.
Wang Fei
Advanced Micro Devices , Inc.
Ishimaru Mikio
Nguyen Thanh
Nguyen Tuan H.
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