Method for manufacturing semiconductor with low resistance...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C257S330000, C257SE21419

Reexamination Certificate

active

07399677

ABSTRACT:
A method for manufacturing a semiconductor device including the steps of: forming a hole having a predetermined depth in a semiconductor layer of a first conductivity type in correspondence with a drain region, the semiconductor layer being formed on a semiconductor substrate; forming a diffusion source layer containing impurities of a second conductivity type different from the first conductivity type in the hole; forming a source region of the first conductivity type in a region shallower than the depth of the hole in the semiconductor layer; forming a channel region of the second conductivity type to be disposed between the drain region and the source region in a region deeper than the depth of the source region in the semiconductor layer; and heating the semiconductor substrate to a first temperature after completing the diffusion source layer forming step to diffuse the impurities of the second conductivity type from the diffusion source layer into the channel region, thereby forming a low resistance region having a conductivity higher than that of the channel region.

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patent: 6008520 (1999-12-01), Darwish et al.
patent: 6144067 (2000-11-01), Kinzer
patent: 2005/0266642 (2005-12-01), Kubo et al.
patent: 60-046024 (1985-03-01), None
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patent: 08-264772 (1996-10-01), None
patent: 2003-533889 (2003-11-01), None
patent: WO 01/88997 (2001-11-01), None

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