Method for manufacturing semiconductor memory devices having a R

Details Method for manufacturing semiconductor memory devices having a R Method for manufacturing semiconductor memory devices having a R

1997-08-28

1999-09-28

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438278, 438760, H01L 218246

Patent

active

059602872

ABSTRACT:
In a conventional method, formation of an intermediate layer to serve as an insulating layer between a metal terminal on the surface of the device and a gate electrode of the device, along with heat treatment of the intermediate layer, is executed after formation of implanted diffusion layers to serve as bit lines of the device. In the method for manufacturing semiconductor memory devices according to the present invention, formation of the intermediate layer and heat treatment thereof are executed before formation of the implanted diffusion layers. The formation of the implanted diffusion layers is executed by introducing an impurity material into a memory cell region of the device with an energy enough to penetrate the intermediate layer. According to the method, heat diffusion of the impurity material due to the heat treatment step is prevented, and thus `Lmin`, i.e. the minimun channel length, can be set shorter and higher degree of integration of devices is made possible. Moreover, the impurity material is also introduced in a calipers region of the device. Part of the intermediate layer on the calipers region is removed and the impurity material in the calipers region is oxidized so as to form a calipers pattern. By the calipers pattern, positioning of the photoresist layer used in the data writing process can be executed with high precision, and thus manufacturing process yields of devices can be raised.

REFERENCES:
patent: 5597753 (1997-01-01), Sheu et al.
patent: 5792697 (1998-09-01), Wen

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