Method for manufacturing semiconductor integrated circuit device

Details Method for manufacturing semiconductor integrated circuit device Method for manufacturing semiconductor integrated circuit device

1996-12-09

2000-08-15

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438683, H01L 218242

Patent

active

061035661

ABSTRACT:
A dynamic random access memory or the like, in which in order to prevent the breakdown voltage deterioration of a capacitive element when a TiN film of an electrode material is deposited by the CVD method over a tantalum film constituting the capacitor insulating film of the capacitive element, a passivation film is formed in advance over the surface of the tantalum oxide film to prevent the tantalum oxide film from contacting a nitrogen-containing reducing gas, when the TiN film is deposited over the tantalum oxide film by the CVD method using a titanium-containing source gas and the nitrogen-containing reducing gas.

REFERENCES:
patent: 5383088 (1995-01-01), Chapple-Sokol et al.
patent: 5438012 (1995-08-01), Kamiyama
patent: 5834357 (1998-11-01), Kang

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