Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-04-18
2008-08-26
Vu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S279000
Reexamination Certificate
active
07417291
ABSTRACT:
Disclosed is a technique for reducing the leak current by reducing contamination of metal composing a polymetal gate of a MISFET. Of a polycrystalline silicon film, a WN film, a W film, and a cap insulating film formed on a gate insulating film on a p-type well (semiconductor substrate), the cap insulating film, the W film, and the WN film are etched and the over-etching of the polycrystalline silicon film below them is performed. Then, a sidewall film is formed on sidewalls of these films. Thereafter, after etching the polycrystalline silicon film with using the sidewall film as a mask, a thermal treatment is performed in an oxidation atmosphere, by which a light oxide film is formed on the sidewall of the polycrystalline silicon film. As a result, the contamination on the gate insulating film due to the W and the W oxide can be reduced, and also, the diffusion of these materials into the semiconductor substrate (p-type well) and the resultant increase of the leak current can be prevented.
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A fully Working 0.14 μm Dram Technology With Polymetal Gate, Jung et al IEDM 2000 pp. 365-368.
Hata Kazuhiro
Ichise Teruhisa
Kujirai Hiroshi
Kumauchi Takahiro
Nagai Ryo
Antonelli, Terry Stout & Kraus, LLP.
Elpida Memory Inc.
Vu David
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