Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-02-06
2007-02-06
Tsai, H. Jey (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S289000, C438S981000, C257SE21675
Reexamination Certificate
active
11349232
ABSTRACT:
The present invention provides a method for manufacturing a semiconductor elemental device wherein a first gate oxide film and a second gate oxide film thicker than the first gate oxide film are formed on a substrate provided with a device forming region comprised of silicon, comprising the steps of implanting an element for promoting a forming speed of each gate oxide film into a region for forming the second gate oxide film of the substrate; and simultaneously forming the first gate oxide film and the second gate oxide film by a thermal oxidation method, wherein in the element implanting step, the element is implanted in space of a depth equal to half the thickness of the second gate oxide film placed in predetermination of its formation from the surface of the substrate in such a manner that with the peak of a concentration distribution of the element as the center, a concentration distribution in which both sides of the peak is given twice as large as a standard deviation of the concentration distribution, is taken.
REFERENCES:
patent: 6300197 (2001-10-01), Inaba
patent: 6562729 (2003-05-01), Kamath et al.
patent: A-07-094503 (1995-04-01), None
Oki Electric Industry Co. Ltd.
Tsai H. Jey
Volentine Francos & Whitt PLLC
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