Method for manufacturing semiconductor element

Details Method for manufacturing semiconductor element Method for manufacturing semiconductor element

2005-09-30

2008-03-04

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

C438S297000, C438S439000

Reexamination Certificate

active

07338881

ABSTRACT:
A method for manufacturing a semiconductor element includes preparing an SOI layer having a transistor forming area and an element isolation area, forming an oxidation-resistant mask layer on the SOI layer, forming a resist mask over the transistor forming area on the oxidation-resistant mask layer, a first etching that etches the oxidation-resistant mask layer using the resist mask so that a predetermined thickness of the oxidation-resistant mask layer remains, a second etching that etches the remaining oxidation-resistant mask layer, using the resist mask and exposing the SOI layer at the element isolation area, and oxidizing the exposed SOI layer using the remaining oxidation-resistant mask layer, to form an element isolation layer. An etching rate during the first etching is higher than during the second etching and a silicon-to-etching selection ratio during the second etching is higher than during the first etching.

REFERENCES:
patent: 2002-237603 (2002-08-01), None

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