Method for manufacturing semiconductor devices by use of dry etc

Details Method for manufacturing semiconductor devices by use of dry etc Method for manufacturing semiconductor devices by use of dry etc

1997-04-03

2000-01-04

Dutton, Brian

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

H01L 2100

Patent

active

06010919&

ABSTRACT:
A manufacturing method of semiconductor devices adaptable for use in microelectronics devices such as angular-rate sensors includes the steps of preparing a silicon wafer having a lamination of a p-type silicon substrate and an n-type epitaxial layer as formed thereon, defining on a specified surface of the wafer a plurality of recess portions each having a reduced-thickness portion on the opposite surface side which consists of the epitaxial layer, forming plural through-going holes in each reduced-thickness portion by causing a gel- or oil-like coolant medium made of a thermally conductive material to be disposed in contact with one surface of the reduced-thickness portion of the silicon substrate and by effecting dry etching of certain region from the other surface of the reduced-thickness portion, and thereafter removing the medium. This medium serves to absorb and dissipate heat generated at the reduced-thickness portion during the dry etching.

REFERENCES:
patent: 5547539 (1996-08-01), Arasawa et al.
patent: 5549785 (1996-08-01), Sakai et al.
patent: 5691794 (1997-11-01), Hoshi et al.

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