Method for manufacturing semiconductor devices

Details Method for manufacturing semiconductor devices Method for manufacturing semiconductor devices

2007-01-16

2007-01-16

Luu, Chuong Anh (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S216000, C438S275000, C438S257000

Reexamination Certificate

active

10902699

ABSTRACT:
A semiconductor device manufacturing method is provided including: forming a first impurity layer that becomes first wells in a high breakdown voltage transistor forming region in a semiconductor layer; forming a second impurity layer that becomes offset regions in the high breakdown voltage transistor forming region; forming the first wells and the offset regions by diffusing impurities of the first and second impurity layers by heat treating the semiconductor layer; forming element isolation regions by a trench element isolation method in the semiconductor layer, after forming the first wells and the offset regions; forming first gate dielectric layers in the high breakdown voltage transistor forming region; forming second wells in a low voltage driving transistor forming region in the semiconductor layer; forming second gate dielectric layers in the low voltage driving transistor forming region; and forming gate electrodes in the high breakdown voltage transistor forming region and the low voltage driving transistor forming region.

REFERENCES:
patent: 6939757 (2005-09-01), Kim
patent: 2004/0256658 (2004-12-01), Park et al.
patent: 11-026596 (1999-01-01), None
patent: 2001-168210 (2001-06-01), None
patent: 2002-170888 (2002-06-01), None
patent: 2002-329862 (2002-11-01), None
patent: 2003-133435 (2003-05-01), None

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