Method for manufacturing semiconductor device utilizing low...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S629000, C438S637000, C438S643000, C438S644000

Reexamination Certificate

active

07838414

ABSTRACT:
A semiconductor device is manufactured by forming a low dielectric constant layer on a semiconductor substrate which is formed with metal lines; implementing primary ultraviolet treatment of the low dielectric constant layer; forming a capping layer on the low dielectric constant layer having undergone the primary ultraviolet treatment; and implementing secondary ultraviolet treatment of the low dielectric constant layer including the capping layer.

REFERENCES:
patent: 6331480 (2001-12-01), Tsai et al.
patent: 6372392 (2002-04-01), Hoshino et al.
patent: 6583067 (2003-06-01), Chang et al.
patent: 6962869 (2005-11-01), Bao et al.
patent: 6974762 (2005-12-01), Gracias et al.
patent: 7030041 (2006-04-01), Li et al.
patent: 7102232 (2006-09-01), Clevenger et al.
patent: 2002/0141911 (2002-10-01), Ishii et al.
patent: 2003/0203508 (2003-10-01), Yates et al.
patent: 2007/0048955 (2007-03-01), Yates et al.
patent: 2006-165573 (2006-06-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for manufacturing semiconductor device utilizing low... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing semiconductor device utilizing low..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing semiconductor device utilizing low... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4178651

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.