Semiconductor device manufacturing: process – Masking
Reexamination Certificate
2011-07-19
2011-07-19
Lee, Hsien-ming (Department: 2823)
Semiconductor device manufacturing: process
Masking
C438S943000, C438S945000, C438S951000, C438S270000, C438S532000, C257S341000, C257SE21334, C257SE21603
Reexamination Certificate
active
07981817
ABSTRACT:
A production method for a semiconductor device includes providing a semiconductor substrate having semiconductor layer of a first conductivity type formed on a surface thereof; forming a first mask so as to cover a predetermined region of the semiconductor layer; (c) forming a well region of a second conductivity type by implanting impurity ions of the second conductivity type into the semiconductor layer having the first mask formed thereon; reducing the thickness of the first mask by removing a portion of the first mask; forming a second mask covering a portion of the well region by using photolithography; and forming a source region of the first conductivity type by implanting impurity ions of the first conductivity type into the semiconductor layer having the first mask with the reduced thickness and the second mask formed thereon.
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Egashira Kyoko
Hashimoto Koichi
Hashimoto Shin
Lee Hsien-Ming
Panasonic Corporation
Renner , Otto, Boisselle & Sklar, LLP
Swanson Walter H
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