Method for manufacturing semiconductor device using a free...

Details Method for manufacturing semiconductor device using a free... Method for manufacturing semiconductor device using a free...

2011-01-18

2011-01-18

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C257SE21267, C438S259000, C438S270000

Reexamination Certificate

active

07871939

ABSTRACT:
A method for manufacturing a semiconductor device for use in avoiding unwanted oxidation along exposed surfaces and for use in relieving etching damage is presented. The method includes step of forming sequentially a gate insulation layer, a polysilicon layer, a barrier layer, a metallic layer and a hard mask layer over a semiconductor substrate. The method also includes a step of etching the hard mask layer, the metallic layer, the barrier layer, the polysilicon layer and the gate insulation layer to form a gate. The method also includes a nitrifying step which uses a free radical is assisted chemical vapor deposition (RACVD) nitrifying process on surfaces of the layers forming the gate and a surface of the semiconductor substrate. The method also includes a step of subsequently performing a reoxidation process to the semiconductor substrate resultant that the RACVD nitrifying process is performed.

REFERENCES:
patent: 6368988 (2002-04-01), Li et al.
patent: 2005/0212035 (2005-09-01), Utsuno et al.
patent: 2008/0246099 (2008-10-01), Varghese et al.
patent: 1020000056496 (2000-09-01), None
patent: 1020050062140 (2005-06-01), None

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