Method for manufacturing semiconductor device to prevent...

Details Method for manufacturing semiconductor device to prevent... Method for manufacturing semiconductor device to prevent...

2008-04-10

2010-06-15

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

Reexamination Certificate

active

07736974

ABSTRACT:
A semiconductor device is made by forming patterns on a semiconductor substrate. After forming the patterns, sequentially forming a spacer layer, an oxidation promotion layer and a buffer layer on the semiconductor substrate including the surfaces of the patterns previously formed. An insulation layer is then formed on the buffer layer to fill the patterns. The semiconductor substrate including the insulation layer is subsequently annealed such that the buffer layer is oxidized and the insulation layer is baked.

REFERENCES:
patent: 2004/0235285 (2004-11-01), Kang et al.
patent: 2005/0277254 (2005-12-01), Ha et al.
patent: 2007/0026621 (2007-02-01), Cho et al.
patent: 63-111648 (1988-05-01), None
patent: 1020050056364 (2005-06-01), None
patent: 1020060057163 (2006-05-01), None
patent: 1020060104829 (2006-10-01), None

Affiliated with

Also associated with

Rating

Method for manufacturing semiconductor device to prevent... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing semiconductor device to prevent..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing semiconductor device to prevent... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4170723