Method for manufacturing semiconductor device incorporating DRAM

Details Method for manufacturing semiconductor device incorporating DRAM Method for manufacturing semiconductor device incorporating DRAM

1996-12-20

1998-06-02

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438649, H01L 218242

Patent

active

057598894

ABSTRACT:
In a method for manufacturing a semiconductor device incorporating a DRAM section and a logic circuit section, a refractory metal layer is formed to cover a bit line of the DRAM section, and a gate electrode and impurity diffusion regions of the logic circuit section. Then, a heating operation is performed upon sadi refractory metal layer, so that metal silicide layers are formed in the bit line of the DRAM section, and the gate electrode and the impurity diffusion regions of the logic circuit section.

REFERENCES:
patent: 5269402 (1993-12-01), Ryou
patent: 5296399 (1994-03-01), Park
patent: 5627093 (1997-05-01), Hachisuka et al.
Jerome B. Lasky et al., "Comparison of Transformation to Low-Resistivity Phase and Agglomeration of TiSi.sub.2 and CoSi.sub.2 ", IEEE Trans of Electron Devices, vol. 38, No. 2, pp. 262-269, Feb. 1991.

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