Method for manufacturing semiconductor device including a...

Details Method for manufacturing semiconductor device including a... Method for manufacturing semiconductor device including a...

2006-12-12

2006-12-12

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S589000, C257SE21429

Reexamination Certificate

active

07148112

ABSTRACT:
Disclosed is a method for manufacturing a semiconductor device. The method includes the steps of preparing a semiconductor substrate, forming a buffer oxide layer, forming a hard mask layer on the buffer oxide layer, etching an exposed portion of the buffer oxide layer by using the hard mask layer, etching a substrate active area of an exposed recess channel forming area by using the isolation layer as an etching mask, removing a remaining buffer oxide layer, sequentially forming a gate oxide layer and a gate conductive layer on a resultant structure, etching the gate conductive layer and the gate oxide layer, thereby forming a gate, and forming a source/drain area in the substrate active area.

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patent: 6486035 (2002-11-01), Chun
patent: 6569737 (2003-05-01), Park et al.
patent: 6927139 (2005-08-01), Tanaka et al.
patent: 7041538 (2006-05-01), Ieong et al.
patent: 7094644 (2006-08-01), Kim
patent: 2002/0094622 (2002-07-01), Sneelal et al.
patent: 2005/0233513 (2005-10-01), Kim et al.

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