Method for manufacturing semiconductor device, including...

Details Method for manufacturing semiconductor device, including... Method for manufacturing semiconductor device, including...

2006-04-11

2006-04-11

Lindsay, Jr., Walter L. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S301000, C438S275000

Reexamination Certificate

active

07026205

ABSTRACT:
A semiconductor device manufacturing method having forming first and second insulating gate portions spaced from each other on a semiconductor substrate, selectively implanting the first conductivity type impurity ions to the first gate electrode and a surface layer of the semiconductor substrate adjacent to the first insulating gate portion, selectively implanting the second conductivity type impurity ions to the second gate electrode and the surface layer adjacent to the second insulating gate portion, after implanting the first and second conductivity types impurity ions, pre-annealing at a first substrate temperature, and after the pre-annealing, main-activating for the first and second types impurity ions at a second substrate temperature higher than the first substrate temperature for a treatment period shorter than a period of the pre-annealing.

REFERENCES:
patent: 5837572 (1998-11-01), Gardner et al.
patent: 6512273 (2003-01-01), Krivokapic et al.
patent: 6777752 (2004-08-01), Osanai et al.
patent: 2004/0018702 (2004-01-01), Ito et al.
patent: 06-069149 (1994-03-01), None
patent: 2002-246329 (2002-08-01), None

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