Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-05-03
2005-05-03
Chaudhuri, Olik (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S220000, C438S225000, C438S227000
Reexamination Certificate
active
06887750
ABSTRACT:
A method is provided for manufacturing a semiconductor device having a high breakdown voltage transistor and a low breakdown voltage transistor with different driving voltages provided in a common substrate. The method includes: (a) introducing a first impurity of a second conductivity type by an ion implantation in a specified region of a semiconductor substrate of a first conductivity type; (b) forming an oxide film on a surface of the semiconductor substrate, and diffusing the first impurity by a heat treatment in an atmosphere that does not include oxygen to form a first well of the second conductivity type; and (c) introducing a second impurity of the first conductivity type through the oxide film in a specified region of the first well, and diffusing the second impurity by a heat treatment to form a second well of the first conductivity type.
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Stanley Wolf Ph.D. and Richard N. Tauber Ph.D. In Silicon Processing for the VLSI Era, vol. 1: Process Technology, Lattice Press, 1986, pp. 323-326.
Brewster William M.
Chaudhuri Olik
Harness & Dickey & Pierce P.L.C.
Seiko Epson Corporation
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