Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-02-22
2011-02-22
Brewster, William M. (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S456000, C438S788000
Reexamination Certificate
active
07892920
ABSTRACT:
A method for manufacturing a semiconductor device which minimizes the line width of a pattern and allows a low temperature oxide film and a thinly formed photoresist film to serve as ion blockers when performing an ion implantation process on the semiconductor substrate.
REFERENCES:
patent: 10-1998-050152 (1998-09-01), None
patent: 10-2006-0006597 (2006-01-01), None
Brewster William M.
Dongbu Hi-Tek Co., Ltd.
Sherr & Vaughn, PLLC
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