Method for manufacturing semiconductor device including...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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Details

C438S456000, C438S788000

Reexamination Certificate

active

07892920

ABSTRACT:
A method for manufacturing a semiconductor device which minimizes the line width of a pattern and allows a low temperature oxide film and a thinly formed photoresist film to serve as ion blockers when performing an ion implantation process on the semiconductor substrate.

REFERENCES:
patent: 10-1998-050152 (1998-09-01), None
patent: 10-2006-0006597 (2006-01-01), None

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