Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-07-18
2006-07-18
Lindsay, Jr., Walter L. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S301000, C438S232000
Reexamination Certificate
active
07078303
ABSTRACT:
A semiconductor device includes a semiconductor substrate, a silicon oxide layer formed on the semiconductor substrate, a gate electrode formed over the silicon oxide layer, and a side wall structure formed over the silicon oxide layer and adjacent the gate electrode. In one configuration, the thickness of the silicon oxide layer under the sidewall structure is thicker than the thickness of the silicon oxide layer under the gate electrode.
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Tokitoh Shunichi
Yoshida Masahiro
Lindsay Jr. Walter L.
Oki Electric Industry Co. Ltd.
VolentineFrancos&Whitt PLLC
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