Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-04-29
2008-04-29
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S133000, C438S135000, C438S138000, C438S140000, C438S156000, C438S242000, C438S286000, C257SE21336, C257SE21346
Reexamination Certificate
active
07364971
ABSTRACT:
A semiconductor device includes a body region, a drift region having a first part and a second part, and a trench gate electrode. The body region is disposed on the drift region. The first and second parts extend in an extending direction so that the second part is adjacent to the first part. The trench gate electrode penetrates the body region and reaches the drift region so that the trench gate electrode faces the body region and the drift region through an insulation layer. The trench gate electrode extends in a direction crossing with the extending direction of the first and second parts. The first part includes a portion near the trench gate electrode, which has an impurity concentration equal to or lower than that of the body region.
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Office Action in parent U.S. Appl. No. 10/872,789 mailed Mar. 1, 2006.
Final Office Action in parent U.S. Appl. No. 10/872,789 mailed Sep. 14, 2006.
Advisory Action in parent U.S. Appl. No. 10/872,789 mailed Jan. 12, 2007.
Office Action in parent U.S. Appl. No. 10/872,789 mailed May 15, 2007.
Hattori Yoshiyuki
Suzuki Mikimasa
Yamaguchi Hitoshi
Denso Corporation
Lebentritt Michael
Lee Kyoung
Posz Law Group , PLC
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