Method for manufacturing semiconductor device having buried...

Details Method for manufacturing semiconductor device having buried... Method for manufacturing semiconductor device having buried...

2011-03-29

2011-03-29

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S589000, C257SE21384

Reexamination Certificate

active

07915121

ABSTRACT:
A method for manufacturing a semiconductor device having a buried gate is provided. A gate conductive layer is first formed in the peri region before a bit line contact is formed in the cell region, so that a fabrication process is simplified and the problem caused by a step height between the cell region and the core/peri region is not encountered.

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