Method for manufacturing semiconductor device background

Details Method for manufacturing semiconductor device background Method for manufacturing semiconductor device background

2007-11-07

2010-02-16

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C428S700000, C428S700000, C257SE21224

Reexamination Certificate

active

07662727

ABSTRACT:
To improve a step coverage and a loading effect, without inviting a deterioration of throughput and an increase of cost, in a method for forming a thin film by alternately flowing a raw material and alcohol to a processing chamber. The method includes: loading a silicon wafer having a surface terminated by H into a processing chamber; supplying alcohol to supply the alcohol into the processing chamber as a first gas; first purging to discharge the first gas from an inside of the processing chamber; supplying a raw material to supply a source gas into the processing chamber as a second gas; second purging to discharge the second gas from the inside of the processing chamber; generating a desired thin film on the silicon wafer by setting as one cycle at least the aforementioned supplying alcohol, first purging, supplying the raw material, and second purging, and by repeating this cycle a prescribed number of times; and unloading the silicon wafer, with said desired thin film generated thereon, from the inside of the processing chamber.

REFERENCES:
patent: 5578130 (1996-11-01), Hayashi et al.
patent: 6593211 (2003-07-01), Sato
patent: 7135207 (2006-11-01), Min et al.
patent: 2007/0148528 (2007-06-01), Sakai
patent: 2009/0042400 (2009-02-01), Pagliaro, Jr.
R. L. Puurunen, “Analysis of hydroxyl group controlled atomic layer deposition of hafnium dioxide from hafnium tetrachloride and water,”Journal of Applied Physics, vol. 95, No. 9, May 2004, pp. 4777-4786.
M. A. Alam et al., “Mathematical description of atomic layer deposition and its application to the nucleation and growth of HfO2Gate dielectric layers,”Journal of Applied Physics, vol. 94, No. 5, Sep. 2003, pp. 3403-3413.

Affiliated with

Also associated with

Rating

Method for manufacturing semiconductor device background does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing semiconductor device background, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing semiconductor device background will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4163040