Method for manufacturing semiconductor device and reticle for wi

Details Method for manufacturing semiconductor device and reticle for wi Method for manufacturing semiconductor device and reticle for wi

1997-07-28

1999-03-30

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438633, 438666, 438668, 438926, H01L 214763

Patent

active

058889000

ABSTRACT:
A method for manufacturing semiconductor device is provided, this method comprises the steps of: depositing a metal film for forming wirings on a substrate; forming a wiring layer, wherein dummy wiring is inserted between wiring space where the dummy wiring can be inserted, and wiring space, where the dummy wiring cannot be inserted, is reduced by widening wiring pattern facing the wiring space; forming an interlayer insulating film on said wiring layer; and flattening surface of the interlayer insulating film. The film can be flattened by a CMP method or by an etchback of entire surface of the film. It is possible to flatten the surface of the semiconductor device cost-effectively and precisely.

REFERENCES:
patent: 5293503 (1994-03-01), Nishigoori
patent: 5459093 (1995-10-01), Kuroda et al.
patent: 5488007 (1996-01-01), Kim et al.
patent: 5556805 (1996-09-01), Tanizawa et al.
patent: 5652465 (1997-07-01), Hosoda et al.

Affiliated with

Also associated with

Rating

Method for manufacturing semiconductor device and reticle for wi does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing semiconductor device and reticle for wi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing semiconductor device and reticle for wi will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1214560