Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-02-19
2010-10-05
Such, Matthew W (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE23145
Reexamination Certificate
active
07807534
ABSTRACT:
A method for producing a semiconductor device includes forming a first hetero-semiconductor layer as a hetero-junction to a surface of a silicon carbide epitaxial layer. This layer is composed of polycrystalline silicon having a band gap different from that of the silicon carbide epitaxial layer. An etching stopper layer composed of a material having a different etching rate from that of the polycrystalline silicon is formed on the surface of the first hetero-semiconductor layer. A second hetero-semiconductor layer composed of polycrystalline silicon is formed so that the second hetero-semiconductor layer contacts the surface of the first hetero-semiconductor layer and the etching stopper layer. The etching stopper layer is removed, the first hetero-semiconductor layer is thermally oxidized, and the thermally oxidized portion is then removed.
REFERENCES:
patent: 5760433 (1998-06-01), Ramer et al.
patent: 6822272 (2004-11-01), Yanamoto
patent: 2004/0238488 (2004-12-01), Choi et al.
patent: 2006/0060917 (2006-03-01), Hayashi et al.
patent: 1 519 419 (2005-03-01), None
patent: 1 641 030 (2006-03-01), None
patent: 2003-318398 (2003-11-01), None
patent: 2006-100357 (2006-04-01), None
Hayashi Tetsuya
Hoshi Masakatsu
Tanaka Hideaki
Yamagami Shigeharu
Naraghi Ali
Nissan Motor Co,. Ltd.
Such Matthew W
Young & Basile
LandOfFree
Method for manufacturing semiconductor device and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing semiconductor device and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing semiconductor device and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4234902