Method for manufacturing semiconductor device and...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S014000, C438S391000, C438S700000, C257SE21545, C257SE21546, C257SE21553, C257SE21564

Reexamination Certificate

active

07846792

ABSTRACT:
A method for manufacturing a semiconductor device that controls the influence of a thickness of a stopper film even if there is a change in the thickness of the stopper film by measuring the thickness prior to etching to a predetermined thickness.

REFERENCES:
patent: 6204146 (2001-03-01), Jenq
patent: 7163869 (2007-01-01), Kim et al.
patent: 2002-151465 (2002-05-01), None
patent: 2004-71862 (2004-03-01), None
patent: 2006-4982 (2006-01-01), None
patent: 2007-109966 (2007-04-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for manufacturing semiconductor device and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing semiconductor device and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing semiconductor device and... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4191764

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.