Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2009-02-03
2010-12-07
Garber, Charles D (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S014000, C438S391000, C438S700000, C257SE21545, C257SE21546, C257SE21553, C257SE21564
Reexamination Certificate
active
07846792
ABSTRACT:
A method for manufacturing a semiconductor device that controls the influence of a thickness of a stopper film even if there is a change in the thickness of the stopper film by measuring the thickness prior to etching to a predetermined thickness.
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patent: 2002-151465 (2002-05-01), None
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patent: 2006-4982 (2006-01-01), None
patent: 2007-109966 (2007-04-01), None
Ahmadi Mohsen
Fujitsu Semiconductor Limited
Garber Charles D
Westerman Hattori Daniels & Adrian LLP
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