Method for manufacturing semiconductor device and...

Details Method for manufacturing semiconductor device and... Method for manufacturing semiconductor device and...

2011-07-05

2011-07-05

Doan, Theresa T (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S224000, C438S227000, C438S228000, C257S335000

Reexamination Certificate

active

07972917

ABSTRACT:
A method for manufacturing a semiconductor device is disclosed. The method includes: forming a LDMOS region, an offset drain MOS region, and a CMOS region; simultaneously forming a first well in the LDMOS region and the offset drain MOS region; simultaneously forming a second well in the first well of the LDMOS region and the CMOS region; and forming a second well in the CMOS region, wherein a depth of the first well is larger than a depth of the second well and the second well is a retrograde well formed by a high energy ion implantation method.

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