Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2008-03-25

2008-03-25

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S595000, C438S928000, C257S021000

Reexamination Certificate

active

07348249

ABSTRACT:
A method for manufacturing a semiconductor device reduces or prevents copper contamination. The method includes forming a gate electrode on a substrate; forming a first oxide layer on a front surface of the substrate including the gate electrode; depositing a nitride layer (simultaneously) on the first oxide layer and a rear surface of the substrate; depositing a second oxide layer on the nitride layer; removing the second oxide layer from the rear surface of the substrate; and forming spacers at sides of the gate electrode by etching the second oxide layer, the nitride layer, and the first oxide layer.

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patent: 7129127 (2006-10-01), Chidambaram et al.
patent: 2004/0018392 (2004-01-01), Yoder

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