Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2008-04-15

2008-04-15

Rose, Kiesha (Department: 4176)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S197000, C438S589000

Reexamination Certificate

active

07358136

ABSTRACT:
A method for manufacturing a semiconductor device includes expanding an active region and a recess region by an epitaxial growth process. As a result, a margin is sufficiently secured in processes for forming a device isolation film that defines the active region and for expanding a recess region to form a bulb recess region.

REFERENCES:
patent: 6476444 (2002-11-01), Min
patent: 7247541 (2007-07-01), Lee et al.
patent: 2004/0248348 (2004-12-01), Rausch et al.
patent: 2004/0259311 (2004-12-01), Kim
patent: 2006/0049455 (2006-03-01), Jang et al.
patent: 2006/0246730 (2006-11-01), Kim et al.
patent: 2007/0007571 (2007-01-01), Lindsay et al.
patent: 10-2006-0023308 (2006-03-01), None

Affiliated with

Also associated with

Rating

Method for manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2747453