Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-01-25
2011-01-25
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S197000, C438S207000, C438S218000, C438S220000, C438S221000, C257SE27046, C257SE27064, C257SE27108, C257SE21632
Reexamination Certificate
active
07875512
ABSTRACT:
According to an aspect of the present invention, there is provided a method for manufacturing a semiconductor device, the method including: forming a first region and a second region in a semiconductor substrate by forming an element isolation region; forming an insulating film on the semiconductor substrate in the first region and the second region; forming a first metal film on the insulating film in the first region and in the second region; removing the first metal film in the second region; forming a second metal film on the first metal film in the first region and on the insulating film in the second region; and flattening top surfaces in the first region and the second region by performing a flattening process.
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Schram, et al., “Novel Process To Pattern Selectively Dual Dielectric Capping Layers Using Soft-Mask Only”, Symposium on VLSI Technology Digest of Technical Papers, pp. 44-45, (2008).
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Estrada Michelle
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
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