Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-05-03
2011-05-03
Menz, Laura M (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S259000, C438S270000
Reexamination Certificate
active
07935595
ABSTRACT:
A method for manufacturing a semiconductor device whereby the process is simplified and high performance can be obtained in both a trench-gate transistor and a planar transistor that has a thin gate insulating film when the two transistors are formed on the same semiconductor substrate. In a state in which the gate insulating film (11s) in a peripheral circuit region PE is covered by a protective film (12), a gate trench (18) is formed in a memory cell region M, after which a gate insulating film (19) that is thicker than the gate insulating film (11s) is formed on an inner wall of the gate trench (18) in a state in which the gate insulating film (11s) of the peripheral circuit region PE is still covered by the protective film (12).
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Elpida Memory Inc.
McDermott Will & Emery LLP
Menz Laura M
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