Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-01-04
2011-01-04
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S589000
Reexamination Certificate
active
07863129
ABSTRACT:
A method for manufacturing a semiconductor device includes forming an oxide film uniformly in a trench in the device isolation by, for example, a radical oxidation process. The method also includes increasing the thickness of the oxide film positioned at recess sidewalls by forming a gate oxide film. Manufacturing the device according to this method will prevent junction leakage and maintain a gate oxidation intensity characteristic that will improve the refresh characteristic of the device.
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Kim Jong Kuk
Kim Seung Bum
Booth Richard A.
Hynix / Semiconductor Inc.
Marshall & Gerstein & Borun LLP
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