Method for manufacturing semiconductor device

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S589000

Reexamination Certificate

active

07863129

ABSTRACT:
A method for manufacturing a semiconductor device includes forming an oxide film uniformly in a trench in the device isolation by, for example, a radical oxidation process. The method also includes increasing the thickness of the oxide film positioned at recess sidewalls by forming a gate oxide film. Manufacturing the device according to this method will prevent junction leakage and maintain a gate oxidation intensity characteristic that will improve the refresh characteristic of the device.

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patent: 6482714 (2002-11-01), Hieda et al.
patent: 6544907 (2003-04-01), Ma et al.
patent: 2005/0186803 (2005-08-01), Umezawa et al.
patent: 2005/0266637 (2005-12-01), Wang
patent: 10-2005-0045505 (2005-05-01), None
patent: 10-2006-0102879 (2006-09-01), None
patent: 10-2007-0070422 (2007-07-01), None
patent: 10-2008-0029667 (2008-04-01), None

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