Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-03-01
2011-03-01
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21428
Reexamination Certificate
active
07897466
ABSTRACT:
There is provided a method for manufacturing a semiconductor device having a high breakdown voltage transistor and a low breakdown voltage transistor provided on a same semiconductor substrate. The method includes forming a first gate electrode of the high breakdown voltage transistor and a second gate electrode of the low breakdown voltage transistor on a transistor formation area of the substrate, as well as a dummy gate electrode on a dummy pattern formation area of the substrate; forming an interlayer insulation film on the substrate so as to cover the first and the second gate electrodes and the dummy gate electrode; and forming a first contact hole on the first gate electrode, a second contact hole on the second gate electrode, and a dummy contact hole on the dummy gate electrode, respectively, by partially dry etching the interlayer insulation film, wherein in the formation of the contact holes, a top surface of the dummy gate electrode is exposed at a bottom of the dummy contact hole before a top surface of the first gate electrode is exposed at a bottom of the first contact hole.
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Booth Richard A.
Harness & Dickey & Pierce P.L.C.
Seiko Epson Corporation
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