Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

1998-06-03

2000-04-04

Chang, Joni

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438398, H01L 218242

Patent

active

060460822

ABSTRACT:
According to the present invention, there is provided a means which can prevent a formation failure of hemispherical silicon crystal grains of DRAM having a stacked capacitor structure having the hemispherical silicon crystal grains, can introduce a sufficient amount of an impurity into the hemispherical silicon crystal grains, and can prevent capacity deterioration by depletion. In the present invention, a first silicon film is formed on a semiconductor substrate incorporated with an MOS transistor and then worked into a predetermined shape, and a spontaneous oxide layer is then formed on the surface of the first silicon film. In succession, a second silicon film containing the impurity and a third silicon film containing no impurity are formed, and annealing is then done without exposing it to the atmosphere to form the hemispherical silicon crystal grains. Afterward, electrodes are separated from each other by etch back to form storage electrodes, and a dielectric film and a plate electrode are formed to prepare a capacitor.

REFERENCES:
patent: 5366917 (1994-11-01), Watanabe et al.
patent: 5960281 (1999-09-01), Nam et al.
patent: 5976931 (1999-11-01), Yew et al.
patent: 5981334 (1999-11-01), Chien et al.

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