Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
1999-12-21
2001-01-30
Dang, Trung (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S306000, C438S595000, C438S528000
Reexamination Certificate
active
06180473
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a method for manufacturing a semiconductor device, and more particularly, to a method for manufacturing MOSFET.
2. Background of the Related Art
Generally, with high packing density of a semiconductor device, there has been provided a method for simultaneously manufacturing devices having different functions or a method for forming a dual gate having gate insulating films of different thicknesses.
In manufacturing a device having gate insulating films of different thicknesses, it is most preferable that both a device having a thin gate insulating film and a device having a thick gate insulating film have desired characteristics at the same time.
A related art method for manufacturing a semiconductor device will be described with reference t o the accompanying drawings .
FIGS. 1
a
to
1
d
are sectional views illustrating a related art method for manufacturing a semiconductor device.
As shown in
FIG. 1
a
, dual gate insulating films
13
and
13
a
are formed by a typical dual gate oxidation process and then gate electrodes
14
and
14
a
are formed. That is to say, a gate electrode
14
having a thin gate insulating film
13
and a gate electrode
14
a
having a relatively thick gate insulating film
13
a
are formed on a semiconductor substrate
11
. A reference numeral
12
which is not described denotes a device isolation film.
Afterwards, as shown in
FIG. 1
b
, lightly doped drain (LDD) regions
15
and
15
a
are formed into the semiconductor substrate
11
by low-concentration impurity ion implantation using the gate electrodes
14
and
14
a
as masks.
As shown in
FIG. 1
c
, an insulating film is deposited on an entire surface of the semiconductor substrate
11
including the gate electrodes
14
and
14
a
. The insulating film is then etched back to form sidewall spacers
16
and
16
a
at both sides of the gate electrodes
14
and
14
a.
As shown in
FIG. 1
d
, source/drain impurity regions
17
and
17
a
are formed by high-concentration impurity ion implantation using the gate electrodes
14
and
14
a
and the sidewall spacers
16
and
16
a
as masks. As a result, the related art method for manufacturing a semiconductor device is completed.
However, the related art method for manufacturing a semiconductor device has several problems.
In case that the thin gate insulating film and the thick gate insulating film are formed at the same time, hot carrier life time characteristic becomes poorer in the device having the thick gate insulating film than the device having the thin gate insulating film, thereby reducing reliability of the device.
SUMMARY OF THE INVENTION
Accordingly, the present invention is directed to a method for manufacturing a semiconductor device that substantially obviates one or more of the problems due to limitations and disadvantages of the related art.
An object of the present invention is to provide a method for manufacturing a semiconductor device which improves hot carrier characteristic in a device having a thick gate insulating film without being affected by short channel effect, thereby improving reliability of the device.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be apparent from the description, or ray be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
To achieve these and other advantages and in accordance with the purpose of the present invention, as embodied and broadly described, a method for manufacturing a semiconductor device according to the present invention includes the steps of forming gate electrodes having gate insulating films of different thicknesses on a semiconductor substrate, implanting a low-concentration impurity ion into the semiconductor substrate at both sides of the gate electrodes, implanting a nitrogen ion into a portion, where the low-concentration impurity ion is implanted, in the gate insulating film relatively thicker than the other gate insulating film, forming sidewall spacers at both sides of the gate electrodes, and implanting a high-concentration source/drain impurity ion into the semiconductor substrate.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the invention as claimed.
REFERENCES:
patent: 5514902 (1996-05-01), Kawasaki et al.
patent: 5554871 (1996-09-01), Yamashita et al.
patent: 5872049 (1999-02-01), Gardner et al.
patent: 5926729 (1999-07-01), Tsai et al.
patent: 5937301 (1999-08-01), Gardner et al.
patent: 6054357 (2000-04-01), Choi
Ahn Jae Gyung
Hong Sung Kwon
Hwang Jeong Mo
Son Jeong Hwan
Dang Trung
Hyundai Electroncis Industries Co., Ltd.
Morgan & Lewis & Bockius, LLP
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